View MGV12N120D_1278883.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGV12N120D/D
Product Preview Data Sheet
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N-Channel Enhancement Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBTs are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operations at high frequencies. Co-packaged IGBTs save space, reduce assembly time and cost. * * * * * High Power Surface Mount D3PAK Package High Speed Eoff: 160 mJ/A typical at 125C High Short Circuit Capability - 10 ms minimum Soft Recovery Free Wheeling Diode is included in the package Robust High Voltage Termination
MGV12N120D
IGBT & DIODE IN D3PAK 12 A @ 90C 20 A @ 25C 1200 VOLTS SHORT CIRCUIT RATED
C G C E
G E
CASE 433-01, Style 1 TO-268AA
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Continuous @ TC = 25C -- Continuous @ TC = 90C -- Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds (1) Pulse width is limited by maximum junction temperature.
This document contains information on a new product. Specifications and information are subject to change without notice.
Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RJC RJC RJA TL
Value 1200 1200 20 20 12 40 123 0.98 - 55 to 150 10 1.02 1.41 45 260
Unit Vdc Vdc Vdc Adc Apk Watts W/C C
ms
C/W
C
(c) Motorola IGBT Device Motorola, Inc. 1995
Data
1
MGV12N120D
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector-to-Emitter On-State Voltage (VGE = 15 Vdc, IC = 5 Adc) (VGE = 15 Vdc, IC = 10 Adc, TJ = 125C) (VGE = 15 Vdc, IC = 10 Adc) Gate Threshold Voltage (VCE = VGE, IC = 1 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Switching Loss Total Switching Loss Gate Charge (VCC = 720 Vdc IC = 10 Adc Vdc, Adc, VGE = 15 Vdc) (VCC = 720 Vdc IC = 10 Adc Vdc, Adc, VGE = 15 Vdc, L = 300 m mH , RG = 20 , TJ = 125C) Energy losses include "tail" (VCC = 720 Vdc IC = 10 Adc Vdc, Adc, VGE = 15 Vdc, L = 300 m mH , RG = 20 , TJ = 25C) Energy losses include "tail" td(on) tr td(off) tf Eoff Eon Ets td(on) tr td(off) tf Eoff Eon Ets QT Q1 Q2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 80 114 66 232 0.57 1.12 1.69 74 110 80 616 1.60 2.30 3.90 31 13 14 -- -- -- -- 1.33 1.88 3.21 -- -- -- -- -- -- -- -- -- -- nC mJ ns mJ ns (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Cies Coes Cres -- -- -- 930 126 16 -- -- -- pF VCE(on) -- -- -- VGE(th) 4.0 -- gfe -- 6.0 10 12 8.0 -- -- 2.51 2.36 3.21 3.37 -- 4.42 Vdc mV/C Mhos Vdc BVCES 1200 -- ICES -- -- IGES -- -- -- -- 100 2500 250 nAdc -- 870 -- -- Vdc mV/C Adc Symbol Min Typ Max Unit
2
Motorola IGBT Device Data
MGV12N120D
ELECTRICAL CHARACTERISTICS -- continued (TJ = 25C unless otherwise noted)
Characteristic DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 5 Adc) (IEC = 5 Adc, TJ = 125C) (IEC = 10 Adc) Reverse Recovery Time ( (IF = 10 Adc, VR = 720 Vd , Ad , Vdc, dIF/dt = 200 A/s) Reverse Recovery Stored Charge Reverse Recovery Time ( (IF = 10 Adc, VR = 720 Vd , Ad , Vdc, dIF/dt = 200 A/s, TJ = 125C) Reverse Recovery Stored Charge (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. VFEC -- -- -- trr ta tb QRR trr ta tb QRR -- -- -- -- -- -- -- -- 2.75 2.50 3.50 54 30 24 61 150 102 48 653 3.22 -- 4.18 -- -- -- -- -- -- -- -- C C ns ns Vdc Symbol Min Typ Max Unit
Motorola IGBT Device Data
3
MGV12N120D
PACKAGE DIMENSIONS
-T- B S
4
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.588 0.592 0.623 0.627 0.196 0.200 0.048 0.052 0.058 0.062 0.078 0.082 0.430 BSC 0.105 0.110 0.018 0.022 0.150 0.160 0.058 0.062 0.353 0.357 0.078 0.082 0.053 0.057 0.623 0.627 0.313 0.317 0.028 0.032 0.050 --- 0.054 0.058 0.050 0.060 0.104 0.108 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.94 15.04 15.82 15.93 4.98 5.08 1.22 1.32 1.47 1.57 1.98 2.08 1.092 BSC 2.67 2.79 0.46 0.56 3.81 4.06 1.47 1.57 8.97 9.07 1.98 2.08 1.35 1.45 15.82 15.93 7.95 8.05 0.71 0.81 1.27 --- 1.37 1.47 1.27 1.52 2.64 2.74
C Q E R
W Y
V N A
P U L
2 PL
1
2
3
K F D 2 PL H
M
J
X
G
0.13 (0.005)
T
DIM A B C D E F G H J K L N P Q R S U V W X Y
CASE 433-01 ISSUE B
BASE COLLECTOR EMITTER COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
4
*MGV12N120D/D*
Motorola IGBT Device Data MGV12N120D/D

▲Up To Search▲

Price & Availability of MGV12N120D

	To Download MGV12N120D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .